Infineon BSS816NWH6327 Dual N-Channel MOSFET: Key Features and Applications

The Infineon BSS816NWH6327 is a highly integrated dual N-channel MOSFET housed in a compact SOT-363 (SC-88) package. This device is engineered using Infineon's advanced small-signal MOSFET technology, offering a space-efficient solution without compromising on performance. It is specifically designed for load switching and signal amplification in low-voltage, high-density circuits where board space is at a premium.

A primary feature of this MOSFET is its low threshold voltage, typically around 1V, which makes it exceptionally easy to drive from low-power microcontrollers (MCUs), logic circuits, and other low-voltage sources without requiring a separate driver IC. This is crucial for battery-powered devices aiming to minimize power consumption and simplify design.

Furthermore, the BSS816NWH6327 boasts a very low on-state resistance (RDS(on)) for both channels. This results in minimal conduction losses when the switch is on, leading to higher efficiency, reduced heat generation, and improved thermal performance of the end application. The dual independent MOSFETs in a single package also allow designers to cut the component count by 50% compared to using two single MOSFETs, streamlining the bill of materials (BOM) and saving valuable PCB real estate.

Typical applications for this component are vast and include:

Portable and Battery-Powered Electronics: Power management in smartphones, tablets, wearables, and wireless peripherals.

Load Switching: Controlling power to sensors, LEDs, and other subsystems in consumer and industrial applications.

Signal Routing and Analog Switching: In audio and data path systems.

Amplification Circuits: Used in small-signal amplification stages due to its fast switching characteristics.

ICGOOODFIND: The Infineon BSS816NWH6327 stands out as a superior choice for modern electronic design, masterfully balancing miniaturization, efficiency, and integration. Its combination of a tiny form factor, low driving requirements, and dual-channel architecture makes it an indispensable component for designers tackling the challenges of space-constrained and power-sensitive applications.

Keywords: Dual N-Channel MOSFET, Low Threshold Voltage, Load Switching, SOT-363 Package, Low RDS(on)