Infineon IPP045N10N3G: High-Performance OptiMOS 3 Power MOSFET for Efficient Power Conversion

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. At the heart of many advanced power conversion systems, from server SMPS and telecom infrastructure to motor drives and solar inverters, lies the power MOSFET. The Infineon IPP045N10N3G stands out as a prime example of engineering excellence, leveraging the proven OptiMOS 3 technology to deliver superior performance in a wide range of applications.

This device is characterized by its exceptionally low on-state resistance (R DS(on)) of just 4.5 mΩ maximum at 10 V gate-source voltage. This fundamental parameter is crucial as it directly dictates conduction losses. A lower R DS(on) means less energy is wasted as heat when the MOSFET is fully turned on, leading to significantly higher overall system efficiency. This allows designers to either extract more power from a given form factor or reduce the need for complex and bulky cooling solutions.

Furthermore, the IPP045N10N3G is designed for high switching speeds. Its low gate charge (Q G) and outstanding figure-of-merit (FOM) ensure rapid switching transitions, which are essential for high-frequency operation. Operating at higher frequencies enables the use of smaller passive components like inductors and capacitors, thereby increasing power density and reducing the overall size and cost of the power supply. The device also features a low effective output capacitance (C OSS(er)), which minimizes switching losses, particularly in hard-switching topologies such as buck converters and power factor correction (PFC) stages.

Housed in a TO-220 package, the IPP045N10N3G offers a robust and industry-standard footprint that balances excellent thermal performance with ease of mounting and assembly. Its ability to handle a continuous drain current (I D) of 100 A at 100°C case temperature and withstand drain-source voltages (V DS) of up to 100 V makes it incredibly versatile for 48V intermediate bus architectures and other demanding environments.

ICGOOODFIND: The Infineon IPP045N10N3G is a high-performance power MOSFET that excels in optimizing power conversion systems. Its defining strengths are its ultra-low on-resistance, which minimizes conduction losses, and its excellent switching characteristics, which enable high-frequency operation and reduce switching losses. This combination makes it an ideal choice for designers aiming to achieve peak efficiency, enhanced power density, and superior thermal management in applications like server power supplies, industrial motor control, and renewable energy systems.

Keywords:

Power Efficiency

Low RDS(on)

OptiMOS 3 Technology

High Switching Speed

Thermal Performance