Infineon BAT62-07W Silicon Schottky Barrier Diode: Characteristics and Applications
The Infineon BAT62-07W is a high-performance silicon Schottky barrier diode designed for applications requiring low forward voltage drop and fast switching capabilities. As a surface-mount device in the SOD-323 package, it is optimized for use in compact, high-frequency circuits where efficiency and thermal management are critical. This diode leverages Schottky barrier technology, which provides significant advantages over conventional PN-junction diodes, particularly in high-speed and low-power scenarios.
A key characteristic of the BAT62-07W is its extremely low forward voltage drop, typically around 0.38V at a forward current of 1mA. This minimizes power loss and improves overall system efficiency, making it ideal for energy-sensitive applications. Additionally, the device exhibits very fast switching speeds due to the absence of minority carrier storage charges, which eliminates reverse recovery time-related losses. This allows it to operate effectively in high-frequency circuits up to several GHz, surpassing the performance of standard diodes.
The diode also features a low reverse leakage current and robust thermal performance, supported by its small form factor and compatibility with automated assembly processes. Its maximum repetitive reverse voltage is 70V, making it suitable for a variety of low to medium voltage applications.
Typical applications include RF detection and mixing, signal sampling, and clamping in high-speed data interfaces. It is also widely used in power management circuits such as DC-DC converters, freewheeling diodes, and reverse polarity protection modules. Furthermore, its high-frequency characteristics make it valuable in communication systems, including mixers and demodulators in wireless devices.
The Infineon BAT62-07W stands out for its high switching speed, low power loss, and reliability in high-frequency and power-efficient designs, making it a versatile choice for modern electronic systems.
Keywords:
Schottky Barrier Diode, Low Forward Voltage, Fast Switching, High-Frequency Applications, Surface-Mount Device
