Infineon BFR460L3E6327: RF Transistor for High-Frequency Amplification Applications

The Infineon BFR460L3E6327 is a high-performance NPN RF bipolar junction transistor (BJT) specifically engineered for high-frequency amplification applications. Designed to excel in demanding radio frequency circuits, this transistor is a cornerstone component in systems requiring exceptional gain, low noise, and reliable operation at microwave frequencies.

A key attribute of the BFR460L3E6327 is its exceptional high-frequency performance, with a transition frequency (fT) of 8 GHz. This makes it ideally suited for applications in the UHF, L-band, and S-band spectra, including cellular infrastructure, satellite communication receivers, and two-way radio systems. Its ability to provide high power gain at these frequencies allows designers to create compact and efficient amplifier stages without compromising on signal integrity.

Furthermore, the transistor is characterized by its low noise figure (NF), a critical parameter for receiver front-ends. In low-noise amplifier (LNA) configurations, the BFR460L3E6327 effectively minimizes the degradation of weak incoming signals, ensuring superior system sensitivity and clarity. This combination of high gain and low noise establishes it as a preferred choice for the critical first stage of a receiver chain.

Packaged in the robust and ultra-miniature SOT-523 surface-mount device (SMD) package, it offers excellent thermal properties and is designed for automated assembly processes, facilitating high-volume manufacturing. The small footprint is crucial for modern, space-constrained PCB designs, enabling higher circuit density without sacrificing RF performance.

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The Infineon BFR460L3E6327 stands out as a superior solution for RF design engineers. It successfully balances critical parameters like high gain, low noise, and stable microwave performance in a miniature package. For designers working on sensitive receivers or power amplifiers within the 8 GHz range, this transistor provides the necessary performance and reliability to create cutting-edge communication products.

Keywords:

RF Transistor

High-Frequency Amplification

Low Noise Figure (NF)

SMD Package

Microwave Performance