Infineon IPP019N08NF2S OptiMOS 5 Power MOSFET: Key Features and Application Benefits

The Infineon IPP019N08NF2S is a state-of-the-art power MOSFET from the OptiMOS™ 5 family, designed to deliver exceptional performance in a wide range of power conversion applications. This N-channel MOSFET is built on an advanced super-junction technology, offering an optimal balance between low on-state resistance and high switching performance. With a voltage rating of 80 V and a continuous drain current of 190 A, this device is engineered for high-power density and energy-efficient designs.

Key Features

One of the most notable attributes of the IPP019N08NF2S is its extremely low on-state resistance (RDS(on)), which is as low as 1.9 mΩ at 10 V. This low resistance minimizes conduction losses, leading to higher efficiency and reduced heat generation. The device also features high current handling capability, making it suitable for demanding applications such as server power supplies, telecom infrastructure, and industrial motor drives.

Another significant advantage is its enhanced switching performance. The OptiMOS™ 5 technology reduces gate charge (Qg) and output charge (Eoss), which allows for faster switching frequencies and lower switching losses. This is particularly beneficial in high-frequency switch-mode power supplies (SMPS) and DC-DC converters, where efficiency at high frequencies is critical.

The MOSFET is housed in an TO-leadless (TOLL) package, which offers a compact footprint and improved thermal performance. The package design minimizes parasitic inductance and resistance, further enhancing the device's efficiency and reliability. Additionally, the IPP019N08NF2S is optimized for high reliability and robustness, with a high tolerance to avalanche and short-circuit conditions.

Application Benefits

In practical applications, the IPP019N08NF2S provides substantial benefits. For instance, in data center power supplies, the low RDS(on) and high switching efficiency contribute to reduced energy consumption and lower operating temperatures, which are crucial for maintaining system reliability and longevity. In automotive systems, such as electric vehicle (EV) powertrains and battery management systems, the device's high current capability and ruggedness ensure stable performance under harsh conditions.

For industrial automation, this MOSFET enables the design of compact and efficient motor drives and power inverters. The reduced heat dissipation allows for smaller heatsinks, lowering overall system size and cost. Similarly, in renewable energy applications like solar inverters, the high efficiency helps maximize power conversion and minimize energy loss.

ICGOOODFIND: The Infineon IPP019N08NF2S OptiMOS™ 5 power MOSFET stands out for its low on-state resistance, high current capability, and superior switching performance. These features make it an ideal choice for high-efficiency, high-power-density designs across various industries, including computing, automotive, industrial, and renewable energy.

Keywords: Power MOSFET, Low RDS(on), High Efficiency, OptiMOS™ 5, High Current Handling